ElFys Oy offers induced junction black silicon photodiodes with external quantum efficiency (EQE) greater than 96% over a broad range of wavelengths (250 to 950 nm). The collection efficiency has been enhanced by employing a surface nanostructuring technique combined with a conformal ALD alumina coating. This results into reliable and nearly ideal device response with incident angles up to 70 degrees. The induced junction virtually eliminates Auger recombination of light generated charge carriers and this way prevents the formation of a dead layer. Additionally, the applied highly effective surface passivation technology, eliminates surface recombination. This combination significantly boosts the collection efficiency of signal charges generated really close to the photodiode top surface, yielding an exceptional over 100% quantum efficiency for ultraviolet light. Furthermore, a nearly ideal response is maintained over the entire optical spectrum shown in figures (see also reference ). Integrating this technology into silicon imaging detectors leads to significant performance improvements in terms of sensitivity and spectral range particularly in ultraviolet region .
 M. A. Juntunen, J. Heinonen, V. Vähänissi, P. Repo, D. Valluru, and H. Savin, “Near-unity quan-tum efficiency of broadband black silicon photodiodes with an induced junction”. Nature Photonics, 10(12), 777-781, 2016
 M. A. Juntunen, J. Heinonen, H. S. Laine, V. Vähänissi, P. Repo, A. Vaskuri and H. Savin, ”N-type Induced junction Black Silicon photodiode for UV detection”. Proc. SPIE 10249, Integrated Pho-tonics: Materials, Devices, and Applications IV, 102490I, 2017
Individual photodiodes are available with active areas e.g. 2,4 x 2,4 mm2, Ø 5mm (19,6 mm2) and 5 x 5 mm2. We can also manufacture custom design sizes and shapes as well as arrays and matrices of photodiodes, which enable a drop in replacement of your current photodiode
The high EQE results from zero reflection of black silicon surface combined with no dead layer of induced junction. These innovations improve the absorption of light and collection of generated charge carriers. In the ultraviolet light region this means 2-3 times higher response compared to other silicon photodiodes optimized for UV detection. Similarly, the black silicon photodiodes give around 30% more signal in scintillator applications compared to standard photodiodes as the broad and high EQE improves overall response to emission spectrum of typical scintillator materials.
Table I Typical leakage current, response and capacitance values of the Black Silicon photodiodes.
|Lekage current pA/mm2||Response A/W||Capacitance (pF/mm2)|
|at 10 mV||at -5 V||at -100 V||at 250 nm||at 400 nm||at 910 nm||at 0 V||at -1 V|
Do you need more information about our products and prices? Please do not hesitate to contact us with the form below.
© 2018 All Rights Reserved