November 20, 2025

ElFys’ black silicon photodiode technology and IP strategy highlighted by Papula-Nevinpat

ElFys is featured in an article by Papula-Nevinpat that highlights how strong intellectual property (IP) strategy has supported our growth from a university spin-out into a global technology leader.

In the article, we explain how our nanostructured black silicon photodiodes trap incoming light with minimal reflection, enabling exceptionally sensitive light detection. We also describe early challenges and how we worked closely with IP experts to secure multiple patent families, as well as trademarks for our name and logo.

Thanks to this IP foundation, we are now scaling our technology into new markets: medical devices, industrial sensing, and scientific instruments. We are also exploring extensions to germanium-based detectors, which would allow us to expand sensitivity into deeper infrared ranges.

Read the full article: How IP is powering the rise of black silicon technology from ElFys — Papula-Nevinpat

Person examining photodiodes at the prober
Juha Heinonen examining photodiodes at the prober – photo by Jari Härkönen

Go Back to News